MRFE6S9201HR3 MRFE6S9201HSR3
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RF Device DataDocument Number: MRFE6S9201H
Freescale SemiconductorRev. 1, 12/2008
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相关PDF资料
MRFE6S9205HSR5
MOSFET RF N-CH 58W 28V NI-880S
MRFE6VP5600HR5
FET RF LDMOS DUAL 230MHZ NI1230
MRFE6VP61K25HSR6
MOSFET RF N-CH 1.25KW NI-1230S
MRFE6VP6300HSR3
FET RF N-CH 230MHZ 125V NI780S-4
MRFE6VP8600HSR6
RF FET LDMOS 50V NI1230S
MRFG35002N6AT1
TRANS RF 1.5W 6V PWR FET PLD-1.5
MRFG35002N6T1
TRANSISTOR RF FET 3.5GHZ PLD-1.5
MRFG35003ANR5
TRANSISTOR RF 3W 12V PLD-1.5
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MRFE6S9205HR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9205HR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9205HSR3
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9205HSR5
功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6VP100H
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power LDMOS Transistors
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制造商:Freescale 功能描述:MRFE6VP Series 1 GHz 100 W 26 dB Gain PNP RF Power Transistor - CASE 017 AA
MRFE6VP100HSR5
功能描述:射频MOSFET电源晶体管 VHV6 100W 50V ISM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray